Q3539807 (Q3539807): Difference between revisions
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(Changed an Item: Edited by the infer coords bot - inferring coordiantes from postal codes) |
(Created claim: summary (P836): The project will fundamentally investigate novel concepts for the control of industrial power semiconductor doping based on ion implantation. Modern methods of ion implantation, such as microdegrader technology, enable the production of particularly efficient power semiconductor components. The aim of the project is to fundamentally investigate process control and characterisation sensors based entirely on charge effects based solely on ion-indu...) |
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The project will fundamentally investigate novel concepts for the control of industrial power semiconductor doping based on ion implantation. Modern methods of ion implantation, such as microdegrader technology, enable the production of particularly efficient power semiconductor components. The aim of the project is to fundamentally investigate process control and characterisation sensors based entirely on charge effects based solely on ion-induced optical or topological material modification (TRL 1-4). (English) | |||||||||||||||
| Property / summary: The project will fundamentally investigate novel concepts for the control of industrial power semiconductor doping based on ion implantation. Modern methods of ion implantation, such as microdegrader technology, enable the production of particularly efficient power semiconductor components. The aim of the project is to fundamentally investigate process control and characterisation sensors based entirely on charge effects based solely on ion-induced optical or topological material modification (TRL 1-4). (English) / rank | |||||||||||||||
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| Property / summary: The project will fundamentally investigate novel concepts for the control of industrial power semiconductor doping based on ion implantation. Modern methods of ion implantation, such as microdegrader technology, enable the production of particularly efficient power semiconductor components. The aim of the project is to fundamentally investigate process control and characterisation sensors based entirely on charge effects based solely on ion-induced optical or topological material modification (TRL 1-4). (English) / qualifier | |||||||||||||||
point in time: 17 November 2021
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Revision as of 22:19, 17 November 2021
Project Q3539807 in Germany
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | No label defined |
Project Q3539807 in Germany |
Statements
559,909.61 Euro
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699,887.01 Euro
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80.0 percent
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1 January 2020
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30 June 2022
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Ernst-Abbe-Hochschule Jena University of Applied Sciences
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50°54'32.44"N, 11°34'31.40"E
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07745 Jena
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Im Vorhaben sollen neuartige Konzepte zur Kontrolle industrieller Leistungshalbleiterdotierung auf Basis von Ionenimplantation grundlegend erforscht werden. Moderne Verfahren der Ionenimplantation, wie etwa die Microdegrader-Technik ermöglichen die Produktion besonders effizienter Leistungshalbleiterbauelemente. Ziel des Vorhabens ist es eine gänzlich von Ladungseffekten unabhängige, allein auf ioneninduzierte optische oder topologische Materialmodifikation basierende Prozesskontroll- bzw. Charakterisierungssensorik grundlegend (TRL 1-4) zu erforschen. (German)
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The project will fundamentally investigate novel concepts for the control of industrial power semiconductor doping based on ion implantation. Modern methods of ion implantation, such as microdegrader technology, enable the production of particularly efficient power semiconductor components. The aim of the project is to fundamentally investigate process control and characterisation sensors based entirely on charge effects based solely on ion-induced optical or topological material modification (TRL 1-4). (English)
17 November 2021
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Identifiers
DE_TEMPORARY_ESF_135719
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