A universal process for Overcoming the equilibrium crystal shape in crystal growth from the vapor phase (Q84341)
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Project Q84341 in Poland
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | A universal process for Overcoming the equilibrium crystal shape in crystal growth from the vapor phase |
Project Q84341 in Poland |
Statements
3,500,000.0 zloty
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3,500,000.0 zloty
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100.0 percent
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1 October 2018
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30 September 2021
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INSTYTUT WYSOKICH CIŚNIEŃ POLSKIEJ AKADEMII NAUK
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The goal of this project is to develop a universal process for overcoming the equilibrium crystal shape in gallium nitride (GaN) crystal growth from the vapor phase. Currently, the diameter of crystallized GaN decreases in time. Results of the project should allow deposition of thick single crystalline GaN boules with a uniform or expanding diameter. Crystallization process will be carried out on c-plane of native GaN seed. For this purpose, precise control of supersaturation on the crystal’s growing surface is necessary. The supersaturation should be reduced on the edges and sidewalls of the growing crystal. This way adsorption of the growth species on the sidewalls will be minimized, while the growth facet (c-facet) will be stabilized and grown out for an arbitrary time period. Such conditions will be achieved by controlling the thermal field around the growing crystal. The boule will reach its final shape by adapting to the thermal field and not take its equilibrium habit. (Polish)
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The goal of this project is to develop a universal process for Overcoming the equilibrium crystal shape in gallium Nitride (GaN) crystal growth from the vapor phase. Currently, the diameter of Crystallised GaN decreases in time. Results of the project should allow deposition of thick single crystalline GaN boules with a uniform or expanding diameter. Crystallisation process will be carried out on c-plane of native GaN seed. For this purpose, precise control of supersaturation on the crystal’s growing surface is necessary. The supersaturation should be reduced on the edges and sidewalls of the growing crystal. This way adsorption of the growth species on the sidewalls will be minimised, while the growth guy (c-facet) will be stabilised and grown out for an arbitrary time period. Such conditions will be achieved by controlling the thermal field around the growing crystal. The boule will reach its final shape by adapting to the thermal field and not take its equilibrium habit. (English)
14 October 2020
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L’objectif de ce projet est de développer un processus universel pour surmonter la forme cristalline d’équilibre dans la croissance cristalline du nitrure de gallium (GaN) à partir de la phase vapeur. Actuellement, le diamètre du GaN cristallisé diminue dans le temps. Les résultats du projet devraient permettre le dépôt de boules de GaN cristallines épaisses d’un diamètre uniforme ou en expansion. Le processus de cristallisation sera effectué sur le plan c des graines de GaN indigènes. À cet effet, un contrôle précis de la supersaturation sur la surface de croissance du cristal est nécessaire. La supersaturation doit être réduite sur les bords et les parois latérales du cristal en croissance. De cette façon, l’adsorption de l’espèce de croissance sur les flancs sera réduite au minimum, tandis que le type de croissance (c-facet) sera stabilisé et développé pendant une période arbitraire. De telles conditions seront réalisées en contrôlant le champ thermique autour du cristal en croissance. La boule atteindra sa forme finale en s’adaptant au champ thermique et ne prendra pas son habitude d’équilibre. (French)
30 November 2021
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Identifiers
POIR.04.04.00-00-5CEB/17
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