No label defined (Q3696866)

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Revision as of 10:43, 22 November 2021 by DG Regio (talk | contribs) (‎Created claim: summary (P836): This project aims to create a new type of electronic nose and electronic language, based on large-area nano-interaction sensors, nano-HEMT (High Mobility Electron Transistor), which in turn is based on nanoscale growth of nitrides materials, carried out by the team of Georgia Tech Lorraine (as part of the UMI) and on the functionalisation of the sensor surface carried out by the LIST team., translated_summary)
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Project Q3696866 in France
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Project Q3696866 in France

    Statements

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    190,466.76 Euro
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    476,166.9 Euro
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    40.0 percent
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    1 September 2015
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    31 December 2017
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    GEORGIA TECH LORRAINE
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    Ce projet a pour objectif la création d'un nouveau type de nez électronique et de langue électronique, basée sur des capteurs nanométriques à grande surface d’interaction, nano-HEMT (transistor à électrons à haute mobilité), qui est basé à son tour sur la croissance à l’échelle nanométrique des matériaux nitrures, réalisée par l’équipe de Georgia Tech Lorraine (dans le cadre de l’UMI) et sur la fonctionnalisation de la surface du capteur effectuée par l’équipe de LIST. (French)
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    This project aims to create a new type of electronic nose and electronic language, based on large-area nano-interaction sensors, nano-HEMT (High Mobility Electron Transistor), which in turn is based on nanoscale growth of nitrides materials, carried out by the team of Georgia Tech Lorraine (as part of the UMI) and on the functionalisation of the sensor surface carried out by the LIST team. (English)
    22 November 2021
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    Identifiers

    LO0007545
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