LNSM – Laboratory of spintronics (Q19853): Difference between revisions
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(Removed claim: summary (P836): The project aims at developing anti-ferromagnetic (AFM) within the AFM as a new electronics industry based on the spin in the AFM. It is aimed at creating a material basis for the sector and developing relevant theory. An experimental objective is the identification and demonstration of the principles enabling the effective detection and handling of AFM loops and the use of the AFM structures such as non-volatile, magnetic and magnetic fields...) |
(Created claim: summary (P836): The project aims to develop antiferromagnetic (AFM) spintronics as a new field of spin-based electronics in AFM materials. It is aimed at creating a material base of this field and on the development of the relevant theory. The experimental goal is to identify and demonstrate principles enabling effective detection and manipulation of AFM spins and the use of AFM structures such as non-volatile ultra-fast memories resistant to ionising radiation...) |
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The project aims to develop antiferromagnetic (AFM) spintronics as a new field of spin-based electronics in AFM materials. It is aimed at creating a material base of this field and on the development of the relevant theory. The experimental goal is to identify and demonstrate principles enabling effective detection and manipulation of AFM spins and the use of AFM structures such as non-volatile ultra-fast memories resistant to ionising radiation and magnetic fields, suitable for high integration. a. (English) | |||||||||||||||
| Property / summary: The project aims to develop antiferromagnetic (AFM) spintronics as a new field of spin-based electronics in AFM materials. It is aimed at creating a material base of this field and on the development of the relevant theory. The experimental goal is to identify and demonstrate principles enabling effective detection and manipulation of AFM spins and the use of AFM structures such as non-volatile ultra-fast memories resistant to ionising radiation and magnetic fields, suitable for high integration. a. (English) / rank | |||||||||||||||
Normal rank | |||||||||||||||
| Property / summary: The project aims to develop antiferromagnetic (AFM) spintronics as a new field of spin-based electronics in AFM materials. It is aimed at creating a material base of this field and on the development of the relevant theory. The experimental goal is to identify and demonstrate principles enabling effective detection and manipulation of AFM spins and the use of AFM structures such as non-volatile ultra-fast memories resistant to ionising radiation and magnetic fields, suitable for high integration. a. (English) / qualifier | |||||||||||||||
point in time: 22 October 2020
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Revision as of 17:26, 22 October 2020
Project in Czech Republic financed by DG Regio
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | LNSM – Laboratory of spintronics |
Project in Czech Republic financed by DG Regio |
Statements
31,009,099.57 Czech koruna
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43,460,546.0 Czech koruna
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71.35 percent
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1 April 2017
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31 March 2021
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Fyzikální ústav AV ČR, v. v. i.
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50°8'4.56"N, 14°28'0.44"E
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18200
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Projekt usiluje o rozvinutí antiferomagnetické (AFM) spintroniky jakožto nového oboru elektroniky založeného na spinu v AFM materiálech. Je zaměřen na vytvoření materiálové základny tohoto oboru a na vývoj příslušné teorie. Experimentálním cílem je identifikace a demonstrace principů umožňujících efektivní detekci a manipulaci AFM spinů a využití AFM struktur např. jako nevolatilních ultrarychlých pamětí odolných vůči ionizujícímu záření a magnetickým polím, vhodných pro vysokou integraci. a. (Czech)
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The project aims to develop antiferromagnetic (AFM) spintronics as a new field of spin-based electronics in AFM materials. It is aimed at creating a material base of this field and on the development of the relevant theory. The experimental goal is to identify and demonstrate principles enabling effective detection and manipulation of AFM spins and the use of AFM structures such as non-volatile ultra-fast memories resistant to ionising radiation and magnetic fields, suitable for high integration. a. (English)
22 October 2020
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Identifiers
CZ.02.1.01/0.0/0.0/16_013/0001405
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