Development of high quality InAlN – the road to strain-free Nitride lasers (Q84318): Difference between revisions
Jump to navigation
Jump to search
(Changed label, description and/or aliases in 1 language: translated_label) |
(Changed label, description and/or aliases in 2 languages: Changing unique label-description pair) |
||
| description / en | description / en | ||
Project in Poland | Project Q84318 in Poland | ||
| description / pl | description / pl | ||
Projekt w Polsce | Projekt Q84318 w Polsce | ||
Revision as of 05:24, 29 October 2020
Project Q84318 in Poland
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Development of high quality InAlN – the road to strain-free Nitride lasers |
Project Q84318 in Poland |
Statements
798,600.0 zloty
0 references
798,600.0 zloty
0 references
100.0 percent
0 references
1 May 2018
0 references
30 April 2020
0 references
INSTYTUT WYSOKICH CIŚNIEŃ POLSKIEJ AKADEMII NAUK
0 references
The project proposes new routes to overcome substantial difficulties in fabrication of InAlN. Finding a method to grow high quality InAlN lattice-matched to GaN (17% In) is fundamental for laser diodes (LDs) and vertical surface emitting lasers (VCSELs). InAlN could replace AlGaN and eliminate problems of lattice mismatch and improve refractive index contrast. We will grow by plasma-assisted molecular beam epitaxy (PAMBE) and perform Monte-Carlo simulations to get an insight to kinetic processes during the growth and understand the influence of the diffusion barriers. We will (1) address the problem of low Al diffusion at low temperatures using high miscut GaN substrates (Ga-polar, N-polar and semipolar), (2) apply extremely high nitrogen flux to improve structural properties and (3) verify the impact of dislocation density on the mechanism of “honeycomb” structure formation. The InAlN layers will be implemented in device structures processed and tested in collaboration with TopGaN. (Polish)
0 references
The project Proposes new routes to overcome substantial difficulties in fabrication of InAlN. Finding a method to grow high quality InAlN lattice-matched to GaN (17 % In) is fundamental for laser diodes (LDs) and vertical surface emitting lasers (VCSELs). InAlN could replace AlGaN and eliminate problems of lattice mismatch and improve refractive index contrast. We will grow by plasma-assisted molecular beam epitaxy (PAMBE) and perform Monte-Carlo simulations to get an insight to kinetic processes during the growth and understand the influence of the diffusion barriers. We will (1) address the problem of low Al diffusion at low temperatures using high miscut GaN substrates (Ga-polar, N-polar and semipolar), (2) apply extremely high nitrogen flux to improve structural properties and (3) verify the impact of dislocation density on the mechanism of “honeycomb” structure formation. The InAlN layers will be implemented in device structures processed and tested in collaboration with TopGaN. (English)
14 October 2020
0 references
Identifiers
POIR.04.04.00-00-4463/17
0 references