Antiferromagnetic proximity effect and development of epitaxial bimetallic antiferromagnets – two routes towards next-generation spintronics (Q84261): Difference between revisions
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Antiferromagnetic proximity effect and development of epitaxial bimetallic antiferromagnets – two routes towards next-generation spintronics | |||
Revision as of 12:32, 14 October 2020
Project in Poland financed by DG Regio
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Antiferromagnetic proximity effect and development of epitaxial bimetallic antiferromagnets – two routes towards next-generation spintronics |
Project in Poland financed by DG Regio |
Statements
787,310.0 zloty
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787,310.0 zloty
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100.0 percent
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1 March 2018
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29 February 2020
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AKADEMIA GÓRNICZO-HUTNICZA IM. STANISŁAWA STASZICA W KRAKOWIE
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The main active components of spintronic elements are ferromagnets (FMs), in which a net spin polarization is responsible for logical zeros and ones. Antiferromagnets (AFMs), in which magnetic order is accompanied by a zero net magnetic moment, play an important role in the spin-valve effect by establishing direction of FM reference layer via an exchange bias effect. However, recent demonstration of magneto-transport effects in AFMs and their ultrafast magnetization dynamics make them potential candidates that could replace FMs in spintronic devices. In this project I propose two routes that will lead to development of antiferromagnetic spintronics. The first one is focused on tuning magnetic properties of AFMs via proximity effect in AFM/AFM bilayers. The second path concentrates on the epitaxial bimetallic AFMs. In both paths the feasibility of AFM spintronics with studied AFM materials will be presented. (Polish)
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The main active components of spintronic elements are ferromagnets (FMS), in which a net spin polarisation is responsible for logical zeros and ones. Antiferromagnets (AFMs), in which magnetic order is accompanied by a zero net magnetic moment, play an important role in the spin-valve effect by establishing direction of FM reference layer via an exchange bias effect. However, recent demonstration of magneto-transport effects in AFMs and their UltraFast magnetisation dynamics make them potential candidates that could replace FMS in spintronic devices. In this project I propose two routes that will lead to development of antiferromagnetic spintronics. The first one is focused on tuning magnetic properties of AFMs via proximity effect in AFM/AFM bilayers. The second path concentrates on the epitaxial bimetallic AFMs. In both paths the feasibility of AFM spintronics with studied AFM materials will be presented. (English)
14 October 2020
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Identifiers
POIR.04.04.00-00-3E5D/17
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