Tunnel section and its applications for GaN based Optoelectronics (Q84211): Difference between revisions
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Tunnel section and its applications for GaN based Optoelectronics | |||
Revision as of 07:46, 18 February 2020
Project in Poland financed by DG Regio
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Tunnel section and its applications for GaN based Optoelectronics |
Project in Poland financed by DG Regio |
Statements
4,464,910.0 zloty
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4,464,910.0 zloty
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100.0 percent
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1 January 2017
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31 December 2021
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INSTYTUT WYSOKICH CIŚNIEŃ POLSKIEJ AKADEMII NAUK
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The work done within the framework of the Project will exploit the new design concept of tunnel junction (TJ) and develop its applications to nitride based optoelectronic devices. The Project is divided to three tasks: 1) development of TJs and determination of their properties, 2) application of TJs to laser diodes grown by Plasma Assisted Molecular Beam Epitaxy (PAMBE) and hybrid growth by Metalorganic Vapour Phase Epitaxy (MOVPE) and PAMBE technology, 3) realization of stacks of light emitting diodes and laser diodes interconnected by TJs. The outcome of the Project will be the implementation of the newly developed devices to the industry. Furthermore, the young students engaged in the project will acquire skills required in design and manufacturing of devices based on the nitride material system. We believe that this Project will lead to improvement in the Polish semiconductor industry through both new nitride devices and development of the human resources. (Polish)
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Identifiers
POIR.04.04.00-00-210C/16
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