A unitary process for over-keeping the equilibrium crystal growth from the Vapor phase (Q84341): Difference between revisions
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(Removed claim: summary (P836): The Goal of this project is to foster a unitary process for over-keeping the equal crystal shin (GaN) crstal growth from the Vapor phase.Current, the diameter of crystalked GaN decline cases in time.Results of the project should alloce a diameter.Crystallisation process will be carried out on c-plane of definitive GaN seed.For this purpose, use control of super-credits on the crystal’s growing surface is necessary.The supermarket should be red...) |
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| Property / summary | |||
| Property / summary: The Goal of this project is to foster a unitary process for over-keeping the equal crystal shin (GaN) crstal growth from the Vapor phase.Current, the diameter of crystalked GaN decline cases in time.Results of the project should alloce a diameter.Crystallisation process will be carried out on c-plane of definitive GaN seed.For this purpose, use control of super-credits on the crystal’s growing surface is necessary.The supermarket should be reduced on the corridors.If the growth Facet (c-facet) will be stability and Crown out for an arbitrary time period.Conditions will be achieved so that controlling the thermal field arenas will be achieved.The Boule will address its final shpe to adapt to the thermal field and not its equivalent habbit. (English) / rank | |||
Revision as of 12:36, 14 October 2020
Project in Poland financed by DG Regio
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | A unitary process for over-keeping the equilibrium crystal growth from the Vapor phase |
Project in Poland financed by DG Regio |
Statements
3,500,000.0 zloty
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3,500,000.0 zloty
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100.0 percent
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1 October 2018
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30 September 2021
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INSTYTUT WYSOKICH CIŚNIEŃ POLSKIEJ AKADEMII NAUK
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The goal of this project is to develop a universal process for overcoming the equilibrium crystal shape in gallium nitride (GaN) crystal growth from the vapor phase. Currently, the diameter of crystallized GaN decreases in time. Results of the project should allow deposition of thick single crystalline GaN boules with a uniform or expanding diameter. Crystallization process will be carried out on c-plane of native GaN seed. For this purpose, precise control of supersaturation on the crystal’s growing surface is necessary. The supersaturation should be reduced on the edges and sidewalls of the growing crystal. This way adsorption of the growth species on the sidewalls will be minimized, while the growth facet (c-facet) will be stabilized and grown out for an arbitrary time period. Such conditions will be achieved by controlling the thermal field around the growing crystal. The boule will reach its final shape by adapting to the thermal field and not take its equilibrium habit. (Polish)
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Identifiers
POIR.04.04.00-00-5CEB/17
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