Q3696866 (Q3696866): Difference between revisions
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(Changed label, description and/or aliases in en: Setting new description) |
(Created claim: summary (P836): This project aims to create a new type of electronic nose and electronic language, based on large-area nano-interaction sensors, nano-HEMT (High Mobility Electron Transistor), which in turn is based on nanoscale growth of nitrides materials, carried out by the team of Georgia Tech Lorraine (as part of the UMI) and on the functionalisation of the sensor surface carried out by the LIST team., translated_summary) |
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This project aims to create a new type of electronic nose and electronic language, based on large-area nano-interaction sensors, nano-HEMT (High Mobility Electron Transistor), which in turn is based on nanoscale growth of nitrides materials, carried out by the team of Georgia Tech Lorraine (as part of the UMI) and on the functionalisation of the sensor surface carried out by the LIST team. (English) | |||||||||||||||
| Property / summary: This project aims to create a new type of electronic nose and electronic language, based on large-area nano-interaction sensors, nano-HEMT (High Mobility Electron Transistor), which in turn is based on nanoscale growth of nitrides materials, carried out by the team of Georgia Tech Lorraine (as part of the UMI) and on the functionalisation of the sensor surface carried out by the LIST team. (English) / rank | |||||||||||||||
Normal rank | |||||||||||||||
| Property / summary: This project aims to create a new type of electronic nose and electronic language, based on large-area nano-interaction sensors, nano-HEMT (High Mobility Electron Transistor), which in turn is based on nanoscale growth of nitrides materials, carried out by the team of Georgia Tech Lorraine (as part of the UMI) and on the functionalisation of the sensor surface carried out by the LIST team. (English) / qualifier | |||||||||||||||
point in time: 22 November 2021
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Revision as of 10:43, 22 November 2021
Project Q3696866 in France
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | No label defined |
Project Q3696866 in France |
Statements
190,466.76 Euro
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476,166.9 Euro
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40.0 percent
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1 September 2015
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31 December 2017
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GEORGIA TECH LORRAINE
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Ce projet a pour objectif la création d'un nouveau type de nez électronique et de langue électronique, basée sur des capteurs nanométriques à grande surface d’interaction, nano-HEMT (transistor à électrons à haute mobilité), qui est basé à son tour sur la croissance à l’échelle nanométrique des matériaux nitrures, réalisée par l’équipe de Georgia Tech Lorraine (dans le cadre de l’UMI) et sur la fonctionnalisation de la surface du capteur effectuée par l’équipe de LIST. (French)
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This project aims to create a new type of electronic nose and electronic language, based on large-area nano-interaction sensors, nano-HEMT (High Mobility Electron Transistor), which in turn is based on nanoscale growth of nitrides materials, carried out by the team of Georgia Tech Lorraine (as part of the UMI) and on the functionalisation of the sensor surface carried out by the LIST team. (English)
22 November 2021
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Identifiers
LO0007545
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