Avian influenza (Q84238): Difference between revisions
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(Created claim: summary (P836): In the Project, in the role of failure of Incorporation of InGaN quantum wells.‘green garn’.In our update research, in good for the first time agreements that the InGaN decomposition is subject to a strain-driven diffusion of points defects.It is the understand of this phenomenon, in are planning to do a number of Experics changing growth parameters (doping, flows of reactants, pressure, temperature, etc.) in epitoxial growth, as well as to the...) |
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Revision as of 13:46, 26 March 2020
Project in Poland financed by DG Regio
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Avian influenza |
Project in Poland financed by DG Regio |
Statements
3,464,455.0 zloty
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3,464,455.0 zloty
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100.0 percent
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1 September 2017
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31 August 2020
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INSTYTUT WYSOKICH CIŚNIEŃ POLSKIEJ AKADEMII NAUK
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In the Project, we will explain the role of point defects (mainly Ga vacancies and hydrogen impurity) in decomposition of InGaN quantum wells. This decomposition occurs during growth of p-type GaN above these wells in LEDs and laser diodes (LDs) emitting in blue/green spectral range, and is one of the main reasons why the efficiencies of green emitters have low efficiencies ("green gap"). In our recent research, we got for the first time indications that the InGaN decomposition is caused by strain-driven diffusion of point defects. To understand this phenomenon, we are planning to do a number of experiments changing growth parameters (doping, flows of reactants, pressure, temperature, etc) in epitaxial growth, as well as to do theoretical modelling of point defect and indium diffusion. The samples will be examined using a number of techniques in collaboration with other labs. As a result, we should find the way of avoiding the InGaN decomposition in LEDs and LDs. (Polish)
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In the Project, in the role of failure of Incorporation of InGaN quantum wells.‘green garn’.In our update research, in good for the first time agreements that the InGaN decomposition is subject to a strain-driven diffusion of points defects.It is the understand of this phenomenon, in are planning to do a number of Experics changing growth parameters (doping, flows of reactants, pressure, temperature, etc.) in epitoxial growth, as well as to the orientation of point defect and input diffusion.The samples will be waived using a number of techniques in collaboration with other lagoons.As a result, should finalise the way of Avoiding the InGaN division in LEDS and LDS. (English)
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Identifiers
POIR.04.04.00-00-3C81/16
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