LNSM – Laboratory of spintronics (Q19853): Difference between revisions
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(Created claim: summary (P836): The project aims to develop antiferromagnetic (AFM) spintronics as a new field of spin-based electronics in AFM materials. It is aimed at creating a material base of this field and on the development of the relevant theory. The experimental goal is to identify and demonstrate principles enabling effective detection and manipulation of AFM spins and the use of AFM structures such as non-volatile ultra-fast memories resistant to ionising radiation...) |
(Changed label, description and/or aliases in 2 languages: Changing unique label-description pair) |
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description / en | description / en | ||
Project in Czech Republic | Project Q19853 in Czech Republic | ||
description / cs | description / cs | ||
Projekt v | Projekt Q19853 v Czechia |
Revision as of 18:28, 28 October 2020
Project Q19853 in Czech Republic
Language | Label | Description | Also known as |
---|---|---|---|
English | LNSM – Laboratory of spintronics |
Project Q19853 in Czech Republic |
Statements
31,009,099.57 Czech koruna
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43,460,546.0 Czech koruna
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71.35 percent
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1 April 2017
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31 March 2021
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Fyzikální ústav AV ČR, v. v. i.
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18200
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Projekt usiluje o rozvinutí antiferomagnetické (AFM) spintroniky jakožto nového oboru elektroniky založeného na spinu v AFM materiálech. Je zaměřen na vytvoření materiálové základny tohoto oboru a na vývoj příslušné teorie. Experimentálním cílem je identifikace a demonstrace principů umožňujících efektivní detekci a manipulaci AFM spinů a využití AFM struktur např. jako nevolatilních ultrarychlých pamětí odolných vůči ionizujícímu záření a magnetickým polím, vhodných pro vysokou integraci. a. (Czech)
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The project aims to develop antiferromagnetic (AFM) spintronics as a new field of spin-based electronics in AFM materials. It is aimed at creating a material base of this field and on the development of the relevant theory. The experimental goal is to identify and demonstrate principles enabling effective detection and manipulation of AFM spins and the use of AFM structures such as non-volatile ultra-fast memories resistant to ionising radiation and magnetic fields, suitable for high integration. a. (English)
22 October 2020
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Identifiers
CZ.02.1.01/0.0/0.0/16_013/0001405
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