Development of high quality InAlN — the road to digestible nitride forests (Q84318): Difference between revisions
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(Created claim: summary (P836): The project proposals to leave the substance of InAlN.Concluding a mehz to pea high quality InAln lattice-matcheed to GN (17 % In) is fundamental for Laser Dides (LDS) and Vertical Surface emitting forests (VCSLs).InAlN could re-place AlGaN and eliminate problems of late index Contracting.In view of the institution with a view to finding the influence of the diffusion barriers, in view of the PAMBE and the Monteca-Carlo situations (PAMBE) and th...) |
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Revision as of 13:48, 26 March 2020
Project in Poland financed by DG Regio
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Development of high quality InAlN — the road to digestible nitride forests |
Project in Poland financed by DG Regio |
Statements
798,600.0 zloty
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798,600.0 zloty
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100.0 percent
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1 May 2018
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30 April 2020
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INSTYTUT WYSOKICH CIŚNIEŃ POLSKIEJ AKADEMII NAUK
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The project proposes new routes to overcome substantial difficulties in fabrication of InAlN. Finding a method to grow high quality InAlN lattice-matched to GaN (17% In) is fundamental for laser diodes (LDs) and vertical surface emitting lasers (VCSELs). InAlN could replace AlGaN and eliminate problems of lattice mismatch and improve refractive index contrast. We will grow by plasma-assisted molecular beam epitaxy (PAMBE) and perform Monte-Carlo simulations to get an insight to kinetic processes during the growth and understand the influence of the diffusion barriers. We will (1) address the problem of low Al diffusion at low temperatures using high miscut GaN substrates (Ga-polar, N-polar and semipolar), (2) apply extremely high nitrogen flux to improve structural properties and (3) verify the impact of dislocation density on the mechanism of “honeycomb” structure formation. The InAlN layers will be implemented in device structures processed and tested in collaboration with TopGaN. (Polish)
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The project proposals to leave the substance of InAlN.Concluding a mehz to pea high quality InAln lattice-matcheed to GN (17 % In) is fundamental for Laser Dides (LDS) and Vertical Surface emitting forests (VCSLs).InAlN could re-place AlGaN and eliminate problems of late index Contracting.In view of the institution with a view to finding the influence of the diffusion barriers, in view of the PAMBE and the Monteca-Carlo situations (PAMBE) and the Monteca-Carlo situations (PAMBE).In will (1) address the issue of low Al diffusion at low temperatures using high displacement GaN substrate (Ga-post-crisis, N-polar and semolina), (2) apply to closely higher nitrogen flux to improve structural objects and (3) verify the impact of location position on the mechanism of ‘HONEYCOMB’ structure formation.The InAlN layers will be implemented in consultation with TopGaN. (English)
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Identifiers
POIR.04.04.00-00-4463/17
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