300 mm pilot line for Smart Power and Power Discretes devices – R3-POWER-UP (Q3100130): Difference between revisions

From EU Knowledge Graph
Jump to navigation Jump to search
(‎Changed an Item: modifying co-finance rate with the percentage)
(‎Changed an Item)
Property / intervention field
 
Property / intervention field: Research and innovation activities in public research centres and centres of competence including networking / rank
 
Normal rank

Revision as of 15:03, 5 October 2021

Project Q3100130 in Romania
Language Label Description Also known as
English
300 mm pilot line for Smart Power and Power Discretes devices – R3-POWER-UP
Project Q3100130 in Romania

    Statements

    country
    Romania
    0 references
    EU contribution
    4,232,000.008 Romanian Leu
    0 references
    846,400.0016000001 Euro
    exchange rate to Euro
    0.2 Euro
    point in time
    13 September 2021
    0 references
    budget
    5,290,000.01 Romanian Leu
    0 references
    1,058,000.002 Euro
    exchange rate to Euro
    0.2 Euro
    point in time
    13 September 2021
    0 references
    co-financing rate
    80.0 percent
    0 references
    start time
    31 January 2018
    0 references
    end time
    31 July 2022
    0 references
    beneficiary name (string)
    UNIVERSITATEA POLITEHNICA DIN BUCURESTI
    0 references
    beneficiary
    Q2757562
    0 references
    summary
    Obiectivul general al prezentului proiect, acceptat la finantare in cadrul ECSEL Joint Undertaking il reprezinta realizarea unei linii pilot multi-KET (nanoelectronica, nanotehnologie, fabricare avansata) de noua generatie de 300 mm pentru tehnologia Smart Power in Europa, astfel contribuind la stabilirea referintei mondiale de soluții inovatoare și competitive pentru provocări societale critice, inclusiv reducerea emisiilor de CO2 și eficienta energetica. De asemenea, pe baza realizarii activitatilor proiectului se urmareste imbunatatirea productivitatii si a competitivitatii solutiilor IC integrate pentru tehnologia Smart Power si tehnologii Power Discrete. Trebuie mentionat faptul ca linia pilot va permite realizarea proceselor Smart Power sub-100nm, pornind de la procesul de BCD10 90nm, beneficiind de echipamentele specifice şi avansate doar pentru waferele de 300mm disponibile. Existenta unei linii de prelucrare completă de 300mm va exploata, de asemenea, portabilitatea la 300mm a celor mai critice și costisitoare etape de proces dedicate pentru alimentarea dispozitivelor discrete (Power Discrete). Linia pilot se va construi pe baza principiilor Digital Factory and Industry 4.0, impunând o facilitate flexibilã, adaptabilã şi de încredere pentru a investiga, de asemenea, sinergia și fezabilitatea economică a fabricãrii atât a proceselor Smart Power, cât şi power discrete utilizând aceeaşi linie de fabricare. Aplicarea acestor tehnologii va fi un factor de progres în domeniul eficienței energetice și de reducere a emisiilor de CO2 la nivel mondial, în conformitate cu planul de acțiune la nivel mondial COP21. Rezultatele liniei pilot vor fi deosebit de importante în viitor, permitand luarea deciziilor strategice cu privire la stabilirea unei linii complete de producție pentru dispozitive de putere (de exemplu, dispozitive cu o complexitate înaltã Smart Power și Power Discrete). Linia pilot se bazează pe trei piloni principali, respectiv: (i) Inovație tehnologică continuă pentru Smart Power şi Power Discrete, care trebuie sa faca fata aplicatiilor de pe piață din ce în ce mai solicitante; (ii) Politica industrială axată pe producţia de masã de înaltă calitate şi pe optimizarea costurilor; (iii) Pregãtirea terenului pentru viitoare upgrade-uri ale tehnologiilor disruptive "More than Moore" pentru plachete pe bazã de wafer (de ex. fabricație MEMS avansate, acum la 200mm). Linia de pilot 300mm va fi localizatã în combinatul ST de la Agrate Brianza (IT), și va avea acces la aceleaşi facilități de apă și gaz ca cele dezvoltate în R2 200mm. Caracteristicile țintă ale tehnologiei Smart Power: Tehnologia Smart Power vizatã de linia pilot 300mm este cel mai recent proces de generare BCD, numit BCD10. Familia BCD (BCD este o abreviere pentru bipolar CMOS și DMOS) este caracterizatã prin mai multe caracteristici electrice diferite, cu o mare varietate de opțiuni de proces, având în comun integrabilitatea cu procese logice CMOS avansate. BCD10 este (Romanian)
    0 references
    The general objective of this project, accepted for financing at ECSEL Joint Undertaking, is to achieve a new generation 300 mm multi-KET pilot line (nanoelectronics, nanotechnology, advanced manufacturing) for Smart Power technology in Europe, thus helping to establish the global reference of innovative and competitive solutions for critical societal challenges, including CO2 emission reduction and energy efficiency. Also, based on the project activities we aim to improve the productivity and competitiveness of integrated IC solutions for Smart Power and Power Discrete technologies. It should be noted that the pilot line will allow the realisation of the Smart Power sub-100nm processes, starting from the BCD10 90nm process, benefiting from specific and advanced equipment only for available 300 mm wafers. The existence of a 300 mm complete machining line will also exploit the 300 mm portability of the most critical and costly process steps dedicated to powering discrete devices (Power Discrete). The pilot line will be built on the Digital Factory and Industry 4.0 principles, requiring a flexible, adaptable and reliable facility to also investigate the synergy and economic feasibility of manufacturing both Smart Power and discrete power processes using the same manufacturing line. The application of these technologies will be a factor in advancing energy efficiency and reducing global CO2 emissions, in line with the Global COP21 Action Plan. The results of the pilot line will be particularly important in the future, allowing strategic decisions on the establishment of a complete production line for power devices (e.g. devices with high complexity Smart Power and Power Discrete). The pilot line is based on three main pillars, namely: (I) Continuous technological innovation for Smart Power and Power Discrete, which has to cope with increasingly demanding market applications; (II) Industrial policy focused on high quality mass production and cost optimisation; (III) Preparing the ground for future upgrades of disruptive technologies “More than Moore” for wafer-based wafers (e.g. advanced MEMS manufacturing, now at 200 mm). The 300 mm pilot line will be located in the ST plant at Agrate Brianza (IT), and will have access to the same water and gas facilities as those developed in R2 200 mm. Target Characteristics of Smart Power Technology: Smart Power technology targeted by the 300 mm pilot line is the latest BCD generation process, called BCD10. The BCD family (BCD is an abbreviation for bipolar CMOS and DMOS) is characterised by several different electrical characteristics, with a wide variety of process options, sharing integrativity with advanced CMOS logic processes. BCD10 is (English)
    point in time
    16 September 2021
    0 references
    location (string)
    Municipiul Bucureşti, Romania
    0 references

    Identifiers

    Romanian Kohesio ID
    115833
    0 references
     
    Retrieved from "https://linkedopendata.eu/w/index.php?title=Item:Q3100130&oldid=12153768"