Revision history of "Polarity Engineering in Nitride Heterostructures" (Q84349)

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12 October 2024

  • curprev 22:0322:03, 12 October 2024DG Regio talk contribs 64,311 bytes 0 Changed label, description and/or aliases in pt
  • curprev 22:0322:03, 12 October 2024DG Regio talk contribs 64,311 bytes +27 Set a claim value: summary (P836): O projeto centra-se em dispositivos verticais de nitreto com campos de polarização incorporados invertidos em estruturas cultivadas em substratos Ga-polares de GaN. Para construir tais dispositivos, vamos explorar características únicas das junções de túneis n-p (TJ). O crescimento da n-p TJ que precede a região ativa do dispositivo permite incorporar a região ativa dentro da configuração p-n em vez da comumente usada n-p. Isto resulta numa direção...

22 March 2024

6 July 2023

11 June 2023

24 May 2023

2 March 2023

  • curprev 19:4219:42, 2 March 2023DG Regio talk contribs 62,612 bytes −3 Changed label, description and/or aliases in lv, sk, da, it, ro, ga, fi, pt, et, es, lt, sv, hr, fr, el, nl, hu, sl, bg, de, mt, cs, and other parts

25 October 2022

21 October 2022

13 August 2022

  • curprev 17:1317:13, 13 August 2022DG Regio talk contribs 60,538 bytes +37,985 Changed label, description and/or aliases in et, lt, hr, el, sk, fi, hu, cs, lv, ga, sl, bg, mt, pt, da, ro, sv, nl, fr, de, it, es, and other parts: Adding translations: et, lt, hr, el, sk, fi, hu, cs, lv, ga, sl, bg, mt, pt, da, ro, sv,

19 January 2022

15 January 2022

16 December 2021

7 December 2021

30 November 2021

  • curprev 16:2516:25, 30 November 2021DG Regio talk contribs 14,197 bytes +2,023 Created claim: summary (P836): Le projet se concentre sur les dispositifs verticaux Nitride avec des champs de polarisation intégrés inversés dans des structures cultivées sur Ga-polar GaN Substrates. Pour construire de tels appareils, nous exploiterons les caractéristiques uniques des jonctions de tunnel n-p (TJ). La croissance de n-p TJ précédant la région active de l’appareil permet d’incorporer la région active dans la configuration p-n plutôt que la n-p un couramment uti...
  • curprev 16:2516:25, 30 November 2021DG Regio talk contribs 12,174 bytes +111 Changed label, description and/or aliases in fr: translated_label

29 October 2020

14 October 2020

  • curprev 12:3612:36, 14 October 2020DG Regio talk contribs 12,503 bytes +107 Changed label, description and/or aliases in 1 language: translated_label
  • curprev 12:3612:36, 14 October 2020DG Regio talk contribs 12,396 bytes −107 Changed label, description and/or aliases in 1 language: remove_english_label
  • curprev 12:3612:36, 14 October 2020DG Regio talk contribs 12,503 bytes +1,816 Created claim: summary (P836): The project focuses on Nitride vertical devices with inverted built-in polarisation fields in structures grown on Ga-polar GaN substrates. To build such devices we will exploit unique features of n-p tunnel junctions (TJ). Growth of n-p TJ preceding the active region of the device allows to Incorporate the active region within the p-n configuration rather than the commonly used n-p one. This results in an inverted built-in electric field directi...
  • curprev 12:3612:36, 14 October 2020DG Regio talk contribs 10,687 bytes −1,050 Removed claim: summary (P836): The project concentrates on nitro vertical forces with integrated design in Gas-post-crisis GaN substrate.It is the shoe features of the command unit of N-P tunnel juntions (TJ).Growth of N-P TJ prevaluing the active region of the destination RATHER that the active region.This results in an active region.Additally, suit will profit from keeping the n-type on the top.Will show that the botth of festivals can lead to new applications of light is...

25 September 2020

23 September 2020

9 June 2020

7 June 2020

26 March 2020

4 March 2020

  • curprev 10:0710:07, 4 March 2020DG Regio talk contribs 10,464 bytes +1,050 Created claim: summary (P836): The project concentrates on nitro vertical forces with integrated design in Gas-post-crisis GaN substrate.It is the shoe features of the command unit of N-P tunnel juntions (TJ).Growth of N-P TJ prevaluing the active region of the destination RATHER that the active region.This results in an active region.Additally, suit will profit from keeping the n-type on the top.Will show that the botth of festivals can lead to new applications of light issu...

18 February 2020

8 February 2020

31 January 2020

14 January 2020