Revision history of "Development of high quality InAlN – the road to strain-free Nitride lasers" (Q84318)

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13 October 2024

  • curprev 06:1806:18, 13 October 2024DG Regio talk contribs 65,231 bytes −5 Changed label, description and/or aliases in pt
  • curprev 06:1806:18, 13 October 2024DG Regio talk contribs 65,236 bytes −3 Set a claim value: summary (P836): O projeto propõe novas vias para superar dificuldades substanciais na fabricação do InAlN. Encontrar um método para cultivar uma rede InAlN de alta qualidade combinada com GaN (17 % In) é fundamental para díodos laser (LDs) e lasers emissores de superfície verticais (VCSELs). O InAlN pode substituir o AlGaN e eliminar problemas de desajuste da rede e melhorar o contraste do índice de refração. Vamos crescer por epitaxia de feixe molecular assistida...

22 March 2024

6 July 2023

11 June 2023

24 May 2023

2 March 2023

  • curprev 22:3522:35, 2 March 2023DG Regio talk contribs 63,567 bytes −139 Changed label, description and/or aliases in it, sk, lv, da, fr, fi, et, ro, sv, ga, es, pt, de, hu, bg, hr, lt, el, sl, cs, nl, mt, and other parts

25 October 2022

21 October 2022

26 July 2022

  • curprev 03:4403:44, 26 July 2022DG Regio talk contribs 61,625 bytes +38,793 Changed label, description and/or aliases in da, el, hr, ro, sk, mt, pt, fi, sl, cs, lt, lv, bg, hu, ga, sv, et, nl, fr, de, it, es, and other parts: Adding translations: da, el, hr, ro, sk, mt, pt, fi, sl, cs, lt, lv, bg, hu, ga, sv, et,

19 January 2022

15 January 2022

16 December 2021

7 December 2021

30 November 2021

  • curprev 16:3316:33, 30 November 2021DG Regio talk contribs 14,327 bytes +2,045 Created claim: summary (P836): Le projet propose de nouvelles voies pour surmonter des difficultés importantes dans la fabrication d’InAlN. Trouver une méthode pour développer un réseau InAlN de haute qualité, assorti à GaN (17 % In), est fondamental pour les diodes lasers (LD) et les lasers émettant des surfaces verticales (VCSEL). InAlN pourrait remplacer AlGaN et éliminer les problèmes d’inadéquation des réseaux et améliorer le contraste de l’indice de réfraction. Nous all...
  • curprev 16:3316:33, 30 November 2021DG Regio talk contribs 12,282 bytes +156 Changed label, description and/or aliases in fr: translated_label

29 October 2020

14 October 2020

  • curprev 12:3612:36, 14 October 2020DG Regio talk contribs 12,566 bytes +135 Changed label, description and/or aliases in 1 language: translated_label
  • curprev 12:3612:36, 14 October 2020DG Regio talk contribs 12,431 bytes −135 Changed label, description and/or aliases in 1 language: remove_english_label
  • curprev 12:3612:36, 14 October 2020DG Regio talk contribs 12,566 bytes +1,823 Created claim: summary (P836): The project Proposes new routes to overcome substantial difficulties in fabrication of InAlN. Finding a method to grow high quality InAlN lattice-matched to GaN (17 % In) is fundamental for laser diodes (LDs) and vertical surface emitting lasers (VCSELs). InAlN could replace AlGaN and eliminate problems of lattice mismatch and improve refractive index contrast. We will grow by plasma-assisted molecular beam epitaxy (PAMBE) and perform Monte-Carl...
  • curprev 12:3612:36, 14 October 2020DG Regio talk contribs 10,743 bytes −1,245 Removed claim: summary (P836): The project proposals to leave the substance of InAlN.Concluding a mehz to pea high quality InAln lattice-matcheed to GN (17 % In) is fundamental for Laser Dides (LDS) and Vertical Surface emitting forests (VCSLs).InAlN could re-place AlGaN and eliminate problems of late index Contracting.In view of the institution with a view to finding the influence of the diffusion barriers, in view of the PAMBE and the Monteca-Carlo situations (PAMBE) and...

9 June 2020

7 June 2020

26 March 2020

4 March 2020

  • curprev 10:0710:07, 4 March 2020DG Regio talk contribs 10,697 bytes +1,245 Created claim: summary (P836): The project proposals to leave the substance of InAlN.Concluding a mehz to pea high quality InAln lattice-matcheed to GN (17 % In) is fundamental for Laser Dides (LDS) and Vertical Surface emitting forests (VCSLs).InAlN could re-place AlGaN and eliminate problems of late index Contracting.In view of the institution with a view to finding the influence of the diffusion barriers, in view of the PAMBE and the Monteca-Carlo situations (PAMBE) and th...

18 February 2020

8 February 2020

31 January 2020

14 January 2020