Revision history of "Influence of point defects on InGaN quantum well decomposition in technology of blue/green laser diodes and LEDs" (Q84238)

Jump to navigation Jump to search

Diff selection: Mark the radio buttons of the revisions to compare and hit enter or the button at the bottom.
Legend: (cur) = difference with latest revision, (prev) = difference with preceding revision, m = minor edit.

13 October 2024

  • curprev 15:4215:42, 13 October 2024DG Regio talk contribs 64,929 bytes +1 Changed label, description and/or aliases in pt
  • curprev 15:4215:42, 13 October 2024DG Regio talk contribs 64,928 bytes +9 Set a claim value: summary (P836): No projeto, explicaremos o papel dos defeitos pontuais (principalmente as vagas de Ga e a impureza de hidrogénio) na decomposição dos poços quânticos InGaN. Esta decomposição ocorre durante o crescimento do GaN de tipo p acima destes poços em LED e díodos laser (LD) que emitem na gama espetral azul/verde e é uma das principais razões pelas quais as eficiências dos emissores verdes têm baixas eficiências («lacuna verde»). Em nossa pesquisa recente, o...

7 March 2024

6 July 2023

11 June 2023

24 May 2023

2 March 2023

25 October 2022

21 October 2022

13 August 2022

  • curprev 17:1217:12, 13 August 2022DG Regio talk contribs 61,146 bytes +38,256 Changed label, description and/or aliases in et, lt, hr, el, sk, fi, hu, cs, lv, ga, sl, bg, mt, pt, da, ro, sv, nl, fr, de, it, es, and other parts: Adding translations: et, lt, hr, el, sk, fi, hu, cs, lv, ga, sl, bg, mt, pt, da, ro, sv,

19 January 2022

15 January 2022

16 December 2021

7 December 2021

30 November 2021

  • curprev 16:2516:25, 30 November 2021DG Regio talk contribs 14,428 bytes +2,078 Created claim: summary (P836): Dans le cadre du projet, nous expliquerons le rôle des défauts ponctuels (principalement Ga vacants et impuretés d’hydrogène) dans la décomposition des puits quantiques InGaN. Cette décomposition se produit au cours de la croissance de GaN de type p au-dessus de ces puits dans les LED et les diodes laser (LD) émettant dans la gamme spectrale bleue/verte, et est l’une des principales raisons pour lesquelles l’efficacité des émetteurs verts a une...
  • curprev 16:2516:25, 30 November 2021DG Regio talk contribs 12,350 bytes +191 Changed label, description and/or aliases in fr: translated_label

29 October 2020

14 October 2020

  • curprev 12:3112:31, 14 October 2020DG Regio talk contribs 12,599 bytes +172 Changed label, description and/or aliases in 1 language: translated_label
  • curprev 12:3112:31, 14 October 2020DG Regio talk contribs 12,427 bytes −74 Changed label, description and/or aliases in 1 language: remove_english_label
  • curprev 12:3112:31, 14 October 2020DG Regio talk contribs 12,501 bytes +1,801 Created claim: summary (P836): In the Project, we will explain the role of point defects (mainly Ga vacancies and hydrogen Impurity) in decomposition of InGaN quantum wells. This decomposition occurs during growth of p-type GaN above these wells in LEDs and laser diodes (LDs) emitting in blue/green spectral range, and is one of the main reasons why the efficiencies of green emitters have low efficiencies (“green gap”). In our recent research, we got for the first time indicat...
  • curprev 12:3112:31, 14 October 2020DG Regio talk contribs 10,700 bytes −1,049 Removed claim: summary (P836): In the Project, in the role of failure of Incorporation of InGaN quantum wells.‘green garn’.In our update research, in good for the first time agreements that the InGaN decomposition is subject to a strain-driven diffusion of points defects.It is the understand of this phenomenon, in are planning to do a number of Experics changing growth parameters (doping, flows of reactants, pressure, temperature, etc.) in epitoxial growth, as well as to th...

9 June 2020

7 June 2020

26 March 2020

4 March 2020

  • curprev 10:0210:02, 4 March 2020DG Regio talk contribs 10,458 bytes +1,049 Created claim: summary (P836): In the Project, in the role of failure of Incorporation of InGaN quantum wells.‘green garn’.In our update research, in good for the first time agreements that the InGaN decomposition is subject to a strain-driven diffusion of points defects.It is the understand of this phenomenon, in are planning to do a number of Experics changing growth parameters (doping, flows of reactants, pressure, temperature, etc.) in epitoxial growth, as well as to the...

18 February 2020

8 February 2020

31 January 2020

14 January 2020