Revision history of "Tunnel junction and its applications for GaN based Optoelectronics" (Q84211)

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12 October 2024

  • curprev 22:0322:03, 12 October 2024DG Regio talk contribs 62,496 bytes −1 Changed label, description and/or aliases in pt
  • curprev 22:0322:03, 12 October 2024DG Regio talk contribs 62,497 bytes −4 Set a claim value: summary (P836): O trabalho realizado no âmbito do projeto explorará o novo conceito de projeto de junção de túneis (TJ) e desenvolverá as suas aplicações para dispositivos optoeletrónicos baseados em nitreto. O projeto divide-se em três tarefas: 1) desenvolvimento de TJ e determinação das suas propriedades, 2) aplicação de TJ a díodos laser cultivados por epitaxia de feixe molecular assistido por plasma (PAMBE) e crescimento híbrido por epitaxia de fase de vapor me...

20 March 2024

6 July 2023

11 June 2023

24 May 2023

2 March 2023

25 October 2022

20 October 2022

26 July 2022

  • curprev 03:4103:41, 26 July 2022DG Regio talk contribs 58,775 bytes +36,551 Changed label, description and/or aliases in da, el, hr, ro, sk, mt, pt, fi, sl, cs, lt, lv, bg, hu, ga, sv, et, nl, fr, de, it, es, and other parts: Adding translations: da, el, hr, ro, sk, mt, pt, fi, sl, cs, lt, lv, bg, hu, ga, sv, et,

19 January 2022

15 January 2022

16 December 2021

7 December 2021

30 November 2021

  • curprev 16:2416:24, 30 November 2021DG Regio talk contribs 14,115 bytes +1,918 Created claim: summary (P836): Les travaux réalisés dans le cadre du projet exploiteront le nouveau concept de jonction tunnel (TJ) et développeront ses applications aux dispositifs optoélectroniques basés sur Nitride. Le projet est divisé en trois tâches: 1) développement de TJs et détermination de leurs propriétés, 2) application des JT aux diodes laser cultivées par l’épitaxie moléculaire assistée par plasma (PAMBE) et croissance hybride par la technologie Metalorganique V...
  • curprev 16:2416:24, 30 November 2021DG Regio talk contribs 12,197 bytes +136 Changed label, description and/or aliases in fr: translated_label

29 October 2020

14 October 2020

  • curprev 12:3012:30, 14 October 2020DG Regio talk contribs 12,501 bytes +125 Changed label, description and/or aliases in 1 language: translated_label
  • curprev 12:3012:30, 14 October 2020DG Regio talk contribs 12,376 bytes −124 Changed label, description and/or aliases in 1 language: remove_english_label
  • curprev 12:3012:30, 14 October 2020DG Regio talk contribs 12,500 bytes +1,795 Created claim: summary (P836): The work done within the framework of the Project will exploit the new design concept of tunnel junction (TJ) and develop its applications to Nitride based Optoelectronic devices. The Project is divided to three tasks: 1) development of TJs and determination of their properties, 2) application of TJs to laser diodes grown by Plasma Assisted Molecular Beam Epitaxy (PAMBE) and hybrid growth by Metalorganic Vapour Phase Epitaxy (MOVPE) and PAMBE te...
  • curprev 12:3012:30, 14 October 2020DG Regio talk contribs 10,705 bytes −1,202 Removed claim: summary (P836): The work done within the framework of the Project exploit the new design concept of tunnel awareness.The Project is provided to that measure:(1) development of TUs and determination of their capabilities, 2) application of TUs is a laser guide for plasma Assisted Molecular Beam Epitaxy (PAMBE) and Smart growth by Metallic Vapour Phase Epitaxy (MP) and PAMBE technology, 3) implementation of tests of light emitting assignments and laser dides In...

9 June 2020

7 June 2020

26 March 2020

4 March 2020

  • curprev 10:0210:02, 4 March 2020DG Regio talk contribs 10,616 bytes +1,202 Created claim: summary (P836): The work done within the framework of the Project exploit the new design concept of tunnel awareness.The Project is provided to that measure:(1) development of TUs and determination of their capabilities, 2) application of TUs is a laser guide for plasma Assisted Molecular Beam Epitaxy (PAMBE) and Smart growth by Metallic Vapour Phase Epitaxy (MP) and PAMBE technology, 3) implementation of tests of light emitting assignments and laser dides Inte...

18 February 2020

8 February 2020

31 January 2020

14 January 2020