Revision history of "Energy-electronic functional blocks based on low induction modules with silicon carbide power devices" (Q78761)

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12 October 2024

  • curprev 21:4321:43, 12 October 2024DG Regio talk contribs 82,312 bytes −5 Changed label, description and/or aliases in pt
  • curprev 21:4321:43, 12 October 2024DG Regio talk contribs 82,317 bytes −77 Set a claim value: summary (P836): A tecnologia de potência de carboneto de silício (SiC) semicondutor de rápido crescimento fornece tensões cada vez mais altas e correntes nominais. Agora é possível construir sistemas eletrônicos de energia para potência de várias dezenas de centenas de kW usando transístores e díodos de potência com tensões de sobretensão de 1200V e 1700V disponíveis no mercado. Estes elementos fazem parte de módulos de potência cuja tecnologia é análoga à utilizad...

23 March 2024

12 January 2024

14 June 2023

11 June 2023

24 May 2023

2 March 2023

  • curprev 22:2322:23, 2 March 2023DG Regio talk contribs 79,639 bytes +582 Changed label, description and/or aliases in da, it, sk, lv, hr, fi, el, fr, ga, sv, pt, ro, et, es, hu, lt, de, nl, bg, sl, cs, mt, and other parts

25 October 2022

20 October 2022

13 August 2022

  • curprev 16:2616:26, 13 August 2022DG Regio talk contribs 77,384 bytes +49,060 Changed label, description and/or aliases in et, lt, hr, el, sk, fi, hu, cs, lv, ga, sl, bg, mt, pt, da, ro, sv, nl, fr, de, it, es, and other parts: Adding translations: et, lt, hr, el, sk, fi, hu, cs, lv, ga, sl, bg, mt, pt, da, ro, sv,

19 January 2022

15 January 2022

16 December 2021

7 December 2021

30 November 2021

  • curprev 14:2614:26, 30 November 2021DG Regio talk contribs 17,370 bytes +2,799 Created claim: summary (P836): La technologie à croissance rapide des instruments de puissance à semi-conducteurs en carbure de silicium (SiC) fournit des composants avec des tensions toujours plus élevées et des courants nominales. Actuellement, il est possible de construire des systèmes électroniques énergétiques avec une puissance de l’ordre de plusieurs dizaines-plusieurs kW avec l’utilisation de transistors et de diodes de puissance disponibles sur le marché avec des ten...
  • curprev 14:2614:26, 30 November 2021DG Regio talk contribs 14,571 bytes +197 Changed label, description and/or aliases in fr: translated_label

29 October 2020

14 October 2020

  • curprev 10:2410:24, 14 October 2020DG Regio talk contribs 14,814 bytes +161 Changed label, description and/or aliases in 1 language: translated_label
  • curprev 10:2410:24, 14 October 2020DG Regio talk contribs 14,653 bytes −151 Changed label, description and/or aliases in 1 language: remove_english_label
  • curprev 10:2410:24, 14 October 2020DG Regio talk contribs 14,804 bytes +2,339 Created claim: summary (P836): The fast-growing semiconductor silicon carbide power (SiC) technology provides increasingly high voltages and rated currents. It is now possible to build energy-electronic systems for power of several dozen-several hundred kW using transistors and power diodes with 1200V and 1700V surge voltages available on the market. These elements are part of power modules whose technology is analogous to the one used for silicon transistors IGBT and has sig...
  • curprev 10:2410:24, 14 October 2020DG Regio talk contribs 12,465 bytes −1,834 Removed claim: summary (P836): A rapidly developing semiconductor process of silicon carbide (SiC) technology provides elements with an increasing pressure of voltage and rating.At present it is possible to build power electronic systems in the order of several hundred kW in the order of several hundred kW with the use of 1200V and 1700V breakthrough power diodes on the market.These elements are part of the power modules whose technology is similar to that of IGBT and has s...

25 September 2020

23 September 2020

15 July 2020

9 June 2020

6 June 2020

26 March 2020

4 March 2020

  • curprev 09:3309:33, 4 March 2020DG Regio talk contribs 12,588 bytes +1,834 Created claim: summary (P836): A rapidly developing semiconductor process of silicon carbide (SiC) technology provides elements with an increasing pressure of voltage and rating.At present it is possible to build power electronic systems in the order of several hundred kW in the order of several hundred kW with the use of 1200V and 1700V breakthrough power diodes on the market.These elements are part of the power modules whose technology is similar to that of IGBT and has sig...

18 February 2020

8 February 2020

31 January 2020

13 January 2020