Revision history of "Innovative materials for advanced e-nose sensors (electronic nose) and e-language (electronic language) applied to the environment" (Q3696866)

Jump to navigation Jump to search

Diff selection: Mark the radio buttons of the revisions to compare and hit enter or the button at the bottom.
Legend: (cur) = difference with latest revision, (prev) = difference with preceding revision, m = minor edit.

10 October 2024

  • curprev 11:3911:39, 10 October 2024DG Regio talk contribs 46,363 bytes +2 Changed label, description and/or aliases in pt
  • curprev 11:3911:39, 10 October 2024DG Regio talk contribs 46,361 bytes +3 Set a claim value: summary (P836): Este projeto visa criar um novo tipo de nariz eletrónico e linguagem eletrónica, baseado em sensores de nanointeração de grande área, nano-HEMT (High Mobility Electron Transistor), que por sua vez se baseia no crescimento em nanoescala de materiais nitretados, realizado pela equipa da Georgia Tech Lorraine (como parte da UMI) e na funcionalização da superfície do sensor realizada pela equipa LIST.

23 March 2024

12 January 2024

19 June 2023

11 June 2023

8 June 2023

11 August 2022

  • curprev 22:2222:22, 11 August 2022DG Regio talk contribs 43,106 bytes +28,543 Changed label, description and/or aliases in et, lt, hr, el, sk, fi, pl, hu, cs, lv, ga, sl, bg, mt, pt, da, ro, sv, nl, fr, de, it, es, and other parts: Adding translations: et, lt, hr, el, sk, fi, pl, hu, cs, lv, ga, sl, bg, mt, pt, da, ro, sv,

14 January 2022

13 January 2022

6 December 2021

1 December 2021

  • curprev 10:1910:19, 1 December 2021DG Regio talk contribs 10,206 bytes +1,272 Created claim: summary (P836): Ziel des Projekts ist die Entwicklung eines neuen Typs elektronischer Nase und elektronischer Sprache, der auf Nanometer-Sensoren mit großer Interaktionsfläche, Nano-HEMT (hochbeweglicher Elektronentransistor) basiert, der wiederum auf dem nanometrischen Wachstum von Nitridmaterialien basiert, das vom Team von Georgia Tech Lorraine (im Rahmen der UMI) durchgeführt wurde, und auf der Funktionalisierung der Sensoroberfläche durch das LIST-Team., t...

27 November 2021

  • curprev 13:1913:19, 27 November 2021DG Regio talk contribs 8,934 bytes −1,328 Removed claim: summary (P836): CE projet a pour objectif la création d‚un nouveau type de nez électronique et de langue électronique, basée sur des capteurs nanométriques à grande surface d‘interaction, nano-HEMT (transistor à électrons à haute mobilité), qui est basé à son tour sur la croissance à l‚échelle nanométrique des matériaux nitrures, réalisée par l‘équipe de Georgia Tech Lorraine (dans le cadre de l‚UMI) et sur la fonctionnalization de la surface du capteur effec...
  • curprev 01:0801:08, 27 November 2021DG Regio talk contribs 10,262 bytes +1,328 Created claim: summary (P836): CE projet a pour objectif la création d‚un nouveau type de nez électronique et de langue électronique, basée sur des capteurs nanométriques à grande surface d‘interaction, nano-HEMT (transistor à électrons à haute mobilité), qui est basé à son tour sur la croissance à l‚échelle nanométrique des matériaux nitrures, réalisée par l‘équipe de Georgia Tech Lorraine (dans le cadre de l‚UMI) et sur la fonctionnalization de la surface du capteur effectu...

26 November 2021

24 November 2021

22 November 2021

  • curprev 10:4310:43, 22 November 2021DG Regio talk contribs 8,308 bytes +190 Changed label, description and/or aliases in en: translated_label
  • curprev 10:4310:43, 22 November 2021DG Regio talk contribs 8,118 bytes +1,214 Created claim: summary (P836): This project aims to create a new type of electronic nose and electronic language, based on large-area nano-interaction sensors, nano-HEMT (High Mobility Electron Transistor), which in turn is based on nanoscale growth of nitrides materials, carried out by the team of Georgia Tech Lorraine (as part of the UMI) and on the functionalisation of the sensor surface carried out by the LIST team., translated_summary

17 November 2021