Revision history of "2018 — CEAT Tech — AAP GRAINE — TOPGAN" (Q3683049)

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9 October 2024

  • curprev 02:1202:12, 9 October 2024DG Regio talk contribs 69,011 bytes +34 Set a claim value: summary (P836): O surgimento de componentes de grande lacuna de Gálio Nitrure (GaN) da família de componentes de energia (Silicium, SiC) sugere perspectivas de aplicação anteriormente inacessíveis. No entanto, a introdução de tais componentes nos sistemas de conversão implica uma nova abordagem à conceção do sistema, permitindo assim explorar plenamente o potencial desses componentes. Assim, a abordagem do projeto TOPGAN adota uma abordagem de conceção orientada pa...

22 March 2024

12 January 2024

7 December 2023

19 June 2023

10 June 2023

8 June 2023

11 August 2022

  • curprev 17:2517:25, 11 August 2022DG Regio talk contribs 65,722 bytes +45,821 Changed label, description and/or aliases in et, lt, hr, el, sk, fi, pl, hu, cs, lv, ga, sl, bg, mt, pt, da, ro, sv, nl, fr, de, it, es, and other parts: Adding translations: et, lt, hr, el, sk, fi, pl, hu, cs, lv, ga, sl, bg, mt, pt, da, ro, sv,

14 January 2022

13 January 2022

6 December 2021

1 December 2021

  • curprev 08:3508:35, 1 December 2021DG Regio talk contribs 12,842 bytes +2,243 Created claim: summary (P836): Die Entstehung von Galliumnitrid (GaN) großen Gap-Komponenten aus der Leistungskomponentenfamilie (Silicium, SiC) lässt bisher unerreichbare Anwendungsperspektiven erkennen. Die Einführung solcher Komponenten in Umwandlungssysteme erfordert jedoch einen neuen Ansatz bei der Systemgestaltung, um das Potenzial dieser Komponenten voll auszuschöpfen. Der Ansatz des TOPGAN-Projekts beruht auf einem anwendungsorientierten Konzept, bei dem verschiedene...

27 November 2021

  • curprev 14:0114:01, 27 November 2021DG Regio talk contribs 10,599 bytes −2,369 Removed claim: summary (P836): L‚émergence des composants à grand gap en Nitrure de Gallium (GaN) parmi la famille des composants de puissance (Silicium, SiC) laisse entrevoir des perspectives applicatives jusqu‘ici non atteignables. Cependant, l’introduction de tels composants dans les systèmes de conversion implique une nouvelle approche dans la concept système, permettant ainsi de tirer pleinement profit du potentiel de ces composants. Ainsi, l‚approche du projet TOPGAN...

26 November 2021

  • curprev 23:5523:55, 26 November 2021DG Regio talk contribs 12,968 bytes +2,369 Created claim: summary (P836): L‚émergence des composants à grand gap en Nitrure de Gallium (GaN) parmi la famille des composants de puissance (Silicium, SiC) laisse entrevoir des perspectives applicatives jusqu‘ici non atteignables. Cependant, l’introduction de tels composants dans les systèmes de conversion implique une nouvelle approche dans la concept système, permettant ainsi de tirer pleinement profit du potentiel de ces composants. Ainsi, l‚approche du projet TOPGAN ad...
  • curprev 15:0815:08, 26 November 2021DG Regio talk contribs 10,599 bytes +103 Changed label, description and/or aliases in de: translated_label

24 November 2021

18 November 2021

  • curprev 18:1718:17, 18 November 2021DG Regio talk contribs 10,065 bytes +103 Changed label, description and/or aliases in en: translated_label
  • curprev 18:1718:17, 18 November 2021DG Regio talk contribs 9,962 bytes +2,116 Created claim: summary (P836): The emergence of Gallium Nitrure (GaN) large gap components from the power component family (Silicium, SiC) suggests previously unreachable application prospects. However, the introduction of such components in conversion systems implies a new approach to system design, thus making it possible to fully exploit the potential of these components. Thus, the TOPGAN project approach adopts an application-driven design approach, exploring different op...

17 November 2021